Research/科学研究 - Yaping Dan Research Group 但亚平研究组

1. Single Atom Electronics1

The development of CMOS technology is driven by the constant down-scaling of CMOS transistor size, which will inevitably lead to single atom electronics. Our group is develping single atom electronics by self-assembling macromolecules with each carrying one dopant atom.

1.单原子电子学

CMOS集成电路技术的飞速发展主要依赖于集成电路CMOS晶体管的尺寸的不断缩小。随着器件尺寸的缩小，最终必将导致晶体管构建在单个原子的基础之上。本研究组拟利用携带单个掺杂原子的有机大分子，通过有机大分子的自组装，实现对单个掺杂原子的大规模操控，发展单原子电子学。

Single atom transistor schematic (left) and self-assembled molecular monolayer doping for single atom control (right)

单原子晶体管示意图（左）和自限制的单分子自组装（右）

Related Publications:/发表的相关论文

1. Deep level transient spectroscopic investigation of phosphorus-doped silicon by
self-assembled molecular monolayers

Xuejiao Gao#, Bin Guan#, Abdelmadjid Mesli, Kaixiang Chen and Yaping Dan*

Nature Communications 9 (2018) 118

2. Atomically thin delta-doping of self-assembled molecular monolayers by flash lamp annealing for Si-based deep UV photodiodes

Shannan Chang, Jiajing He, Slawomir Prucnal, Jieyin Zhang, Jianjun Zhang, Shenqiang Zhou, Manfred Helm, Yaping Dan*

ACS Applied Materials and Interfaces 14 (2022) 30000-30006. (Journal Cover)

3. Wafer-scale deep UV Si photodiodes based on ultra-shallow junction

Shuwen Guo, Shannan Chang, Zhengfang Fan, Zhijuan Su, Yueyang Jia, Jian Xu, Fengdan Wang, Liying Wu, Slawomir Prucnal, Shengqiang Zhou, Xiaolong Zhao, Rui Yang, Yongning He, and Yaping Dan*

IEEE Electron Device Letters 45 (2024) 944-947

2. Silicon Photonics

This research direction to develop fully integrated silicon photonics based on our recent breakthrough on silicon light emitting diode at 1.54um.

2. 硅基光电子

该研究方向以我组近期在通讯波段硅基发光二极管的突破性研究为基础，发展完全集成的硅基光电子。

1. Efficient Er/O-doped Silicon Light-emitting Diodes at Communication Wavelength by Deep Cooling

Huimin Wen#, Jiajing He#, Jing Hong#, Shenbao Jin, Zhenming Xu, Hong Zhu, Jingquan Liu, Gang Sha, Fangyu Yue* and Yaping Dan*

Advanced Optical Materials 18 (2020) 2000720

2. Efficient Er/O Doped Silicon Photodiodes at Communication Wavelengths by Deep Cooling

Xingyan Zhao, Kaiman Lin, Sai Gao, Huayou Liu, Jiajing He, Xiaoming Wang, Huimin Wen, Yaping Dan*

Advanced Materials Technologies 6 (2021) 2100137

3. Analytical impact excitation of Er/O/B co-doped Si light emitting diodes

Xiaoming Wang, Jiajing He, Ao Wang, Kun Zhang, Yufei Sheng, Weida Hu, Chaoyuan Jin, Hua Bao, Yaping Dan*

Physical Review Letters 2024 (accepted) Highlighted as the Editor's Suggestion

3. Integrated spectral analyzer chip

This research direction is to turn a laboratory FTIR spectral analyzer into an integrated spectral analyzer chip. This miniaturized spectral analyzer may find a wide range of applications in chemical sensing, disease diagnosis and multispectral imaging.

3. 集成化的光谱分析芯片

该研究方向拟将实验室使用的大型傅里叶变换光谱小型化为芯片级系统，从而实现便携式的光谱分析芯片。一个小型化的光谱分析系统可在化学传感、疾病诊断和多光谱成像方向具有广泛的应用前景。

Related Publications/发表的相关论文

1. Mid-infrared plasmonic multispectral filters

Ang Wang and Yaping Dan*

Scientific Reports 8 (2018) 11257

2. Plasmonic micropipe spectral filters in mid-infrared

Jian Xu#, Ang Wang# and Yaping Dan*

Optics Letters 44 (2019) 4479-4482

3. High-performance plasmonic mid-infrared bandpass filters by inverse design

Jiarui Zhang, Zeji Chen, Zhijuan Su* and Yaping Dan*

Nanotechnology 35 (2024) 175202

4. Revolutionary Device Principle of High-Gain Photoconductors

Photoconductor devices are the simplest photodetectors in terms of structure (no need for doping, etc.), but they have a huge quantum efficiency gain (up to 10 billion times), which is far superior to that of conventional diodes, bipolar transistors, and avalanche diodes, and thus they have the potential to develop high-sensitivity photodetectors, especially for defense-specific semiconductor devices. However, such devices have not been widely used in practical applications, one of the reasons being the lack of an explicit theory that can guide the design of the devices, since the existing classical theory is not only a hidden function but even fundamentally flawed. My research team found that there are two premise assumptions in the classical theory that are inconsistent with the actual devices (ACS Photonics 2018), and based on a large number of experimental studies (ACS Nano 2018, 2020, 2021), we have established a complete theory of the new explicit photoconductive devices, which provides an important theoretical basis for the design and optimization of the comprehensive performance of the photoconductive devices, and is expected to rewrite some chapters of classic semiconductor physics textbooks and promote the wide application of high-gain photoconductive devices.

4. 高增益光电导器件变革性器件理论

光电探测器是光电成像技术发展的基石，在国家重大战略需求中占有重要地位。光电导器件是结构最简单的光电探测器（无需掺杂等），却具有巨大的量子效率增益（最高达100亿倍），远优于常规二极管、双极型晶体管和雪崩二极管，因此有潜力研制高灵敏度光电探测器，特别是国防特种半导体器件（因其难以实现掺杂、退火等复杂工艺）。但该类器件一直未获得广泛的实际应用，原因之一是缺乏可指导器件设计的显性理论，因为现有的经典理论不仅是隐性函数甚至还存在根本性的缺陷。我研究团队发现经典理论存在两处前提假定与器件实际不符(ACS Photonics 2018)，在大量实验研究基础上(ACS Nano 2018, 2020, 2021)建立了完整的新型显性光电导器件理论，为光电导器件综合性能的设计和优化提供了重要理论依据，有望改写经典半导体物理课本部分章节并推动高增益光电导器件的广泛应用。

Related Publications/发表的相关论文

1. Analytical Transient Responses and Gain-Bandwidth-Products of Low-Dimensional High Gain Photodetectors

Jiajing He, Huayou Liu, Chulin Huang, Yueyang Jia, Kai Li, Abdelmadjid Mesli, Rui Yang, Yongning He, Yaping Dan*

ACS Nano 15 (2021) 20242-20252 pdf

2. Explicit Gain Equations for Single Crystalline Photoconductors

Jiajing He#, Kaixiang Chen#, Chulin Huang, Xiaoming Wang, Yongning He, Yaping Dan*

ACS Nano 14 (2020) 3405-3413 pdf

3. A photoconductor intrinsically has no gain

Yaping Dan*, Xingyan Zhao, Kaixiang Chen and Abdelmajid Mesli

ACS Photonics 5 (2018) 4111–4116 pdf

4. Dynamics of charge carriers in silicon nanowire photoconductors revealed by photo Hall effect measurements

Kaixiang Chen, Xiaolong Zhao, Abdelmadjid Mesli, Yongning He* and Yaping Dan*

ACS Nano 12 (2018) 3436-3441 pdf